Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
نویسندگان
چکیده
Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, and Susanne Stemmer Materials Department, University of California, Santa Barbara, California, 93106-5050, USA Department of Physics, University of California, Santa Barbara, California, 93106-9530, USA FEI, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
منابع مشابه
Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO3/SrTiO3 and LaAlO3/SrTiO3 Interfaces
Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface between a Mott insulator GdTiO3 (GTO) and a band insulator SrTiO3 (STO) and compare our results with those for the widely studied LaAlO3/SrTiO3 (LAO/STO) interf...
متن کاملHigh-density Two-Dimensional Small Polaron Gas in a Delta-Doped Mott Insulator
Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of rand...
متن کاملSymmetry lowering in extreme-electron-density perovskite quantum wells.
We report on structural distortions in extreme-electron density (∼6×10(14) cm(-2)) confined quantum wells of SrTiO3 embedded in GdTiO3. Sr-column displacements are measured using high-angle annular dark-field imaging in scanning transmission electron microscopy. Using thick SrTiO3 layers as a reference, orthorhombic-like Sr-site displacements are observed when SrTiO3 quantum wells are thinner ...
متن کاملCarrier density independent scattering rate in SrTiO3-based electron liquids
We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T(n) (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectation...
متن کاملHybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces
At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011